BB603M
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
BB603M datasheet
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МаркировкаBB603M
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ПроизводительRenesas Electronics
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ОписаниеRenesas Electronics BB603M Mfr Package Description: MPAK-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: SOURCE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.1500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 17 dB Drain Current-Max (ID): 0.0200 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0500 pF DS Breakdown Voltage-Min: 6 V
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Количество страниц13 шт.
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Форматы файлаHTML, PDF
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